KAWASAKI, Japan, March 06, 2025--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, "TLP5814H," with an output of +6.8A/-4.8A, in a ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...

TOKYO, JAPAN / ACCESSWIRE / December 22, 2023 / Power Diamond Systems, Inc. (PDS, Tokyo, JAPAN, CEO Tatsuya Fujishima), a leading innovator in the research and development of diamond semiconductor ...

SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings ...

The drive to reduce fuel consumption and CO 2 emissions by automobile manufacturers worldwide is clearly aided by the electrification of accessories and powertrains alike. Such developments become ...

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off, causing malfunctions such as short ...